MIS DIODES ON AMORPHOUS SILICON

被引：6

作者：

WILSON, JIB

ROBINSON, P

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90286-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：489 / 491

页数：3

共 9 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[2] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[3] OPEN-CIRCUIT VOLTAGE OF MIS SILICON SOLAR-CELLS [J].

PONPON, JP ;

SIFFERT, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3248-3251

[4] THEORY OF METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J].

SHEWCHUN, J ;

SINGH, R ;

GREEN, MA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :765-770

[5] PHOTOVOLTAIC EFFECT IN MIS DIODES OR SCHOTTKY DIODES WITH AN INTERFACIAL LAYER [J].

SINGH, R ;

SHEWCHUN, J .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :512-514

[6] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[7] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[9] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES [J].

WRONSKI, CR ;

CARLSON, DE ;

DANIEL, RE .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :602-605

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