0.1-MU-M-GATE, ULTRATHIN-FILM CMOS DEVICES USING SIMOX SUBSTRATE WITH 80-NM-THICK BURIED OXIDE LAYER

A 0.1-mum-gate CMOS/SIMOX is fabricated using high-quality SIMOX substrates with a sub-100-nm-thick buried oxide layer. In addition, 0.085-mum-gate nMOSFET's/SIMOX and pMOSFET's/SIMOX with 8-nm-thick silicon active layers have been fabricated. The prospects for improving the performance of 0.1-mum-gate CMOS/SIMOX devices are discussed in detail.