A SIMPLE-MODEL FOR SHORT-CHANNEL EFFECTS OF A BURIED-CHANNEL MOSFET ON THE BURIED INSULATOR

被引：7

作者：

OMURA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 11期

关键词：

D O I：

10.1109/T-ED.1982.21021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1749 / 1755

页数：7

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