RADIATION-INDUCED INCREASE IN THE INVERSION LAYER MOBILITY OF REOXIDIZED NITRIDED OXIDE MOSFETS

被引：14

作者：

DUNN, GJ ^{[1
]}

GROSS, BJ ^{[1
]}

SODINI, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 03期

关键词：

D O I：

10.1109/16.123494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The inversion layer mobility of reoxidized nitrided oxide (RNO) n-MOSFET's (and, to a lesser degree, p-MOSFET's) is found to increase after irradiation and subsequent low-temperature anneal, a process sequence which occurs in X-ray or electron-beam lithography fabrication of CMOS circuits. 1/f noise measurements indicate that the irradiation and anneal reduce the density of near-interface electron traps. Thus our findings support the model which invokes nitridation-induced near-interface electron traps as part of the explanation for reduced low-field electron mobility in RNO versus conventional oxide MOSFET's. Our data for p-channel devices suggest that the near-interface trap is amphoteric in nature, but much less efficient at trapping holes.

引用

页码：677 / 684

页数：8

共 26 条

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