CONDUCTION-BAND STRUCTURE OF GAINP

被引:44
作者
MERLE, P
AUVERGNE, D
MATHIEU, H
CHEVALLIER, J
机构
[1] UNIV MONTPELLIER 2, CNRS, CTR ETUD ELECTR SOLIDES, F-34060 MONTPELLIER, FRANCE
[2] CNRS LAB, F-92190 Meudon, FRANCE
关键词
D O I
10.1103/PhysRevB.15.2032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2032 / 2047
页数:16
相关论文
共 39 条
[21]  
LAUGIER A, 1974, J PHYS PARIS S4, V35, P77
[22]   THERMOREFLECTANCE STUDIES OF THIN EPITAXIALLY DEPOSITED (INGA)P ALLOYS [J].
LETTINGTON, AH ;
JONES, D ;
SARGINSON, R .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (12) :1534-+
[23]   LONG-WAVELENGTH OPTICAL PHONONS IN GA1-XINXP [J].
LUCOVSKY, G ;
BRODSKY, MH ;
CHEN, MF ;
CHICOTKA, RJ ;
WARD, AT .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (06) :1945-+
[24]   CRYSTAL SYNTHESIS, ELECTRICAL PROPERTIES, AND SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE OF IN1-XGAXP-N GROWN FROM SOLUTION [J].
MACKSEY, HM ;
HOLONYAK, N ;
DUPUIS, RD ;
CAMPBELL, JC ;
ZACK, GW .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1333-1341
[25]   MODULATION OF PHONON STRUCTURES IN PIEZO-TRANSMISSION EXPERIMENTS [J].
MATHIEU, H ;
AUVERGNE, D ;
MERLE, P .
SOLID STATE COMMUNICATIONS, 1976, 18 (05) :589-591
[26]   MODULATED SPECTROSCOPY OF ZINCBLENDE SEMICONDUCTORS - CALCULATION OF PIEZOMODULATION PARAMETERS FOR INDIRECT SEMICONDUCTORS [J].
MATHIEU, H ;
AUVERGNE, D ;
MERLE, P .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 72 (02) :609-616
[27]   IMPURITY-INDUCED TRANSITIONS IN DIFFERENTIAL SPECTROSCOPY [J].
MATHIEU, H ;
CAMASSEL, J ;
AUVERGNE, D .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (02) :797-804
[29]   INDIRECT, GAMMA-8NU-X-1C, BAND GAP IN GAAS1-XPX [J].
ONTON, A ;
FOSTER, LM .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5084-5090
[30]   ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS [J].
ONTON, A ;
LORENZ, MR ;
REUTER, W .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3420-&