APPLICATION OF AUGER-ELECTRON SPECTROSCOPY AND PRINCIPAL COMPONENT ANALYSIS TO THE STUDY OF THE PD/C-SI AND PD/A-SI INTERFACES

被引：39

作者：

VIDAL, R

FERRON, J

机构：

来源：

APPLIED SURFACE SCIENCE | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0169-4332(88)90066-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：263 / 276

页数：14

共 24 条

[11] STOICHIOMETRIC AND STRUCTURAL ORIGIN OF ELECTRONIC STATES AT THE PD2SI-SI INTERFACE [J].

HO, PS ;

SCHMID, PE ;

FOLL, H .

PHYSICAL REVIEW LETTERS, 1981, 46 (12) :782-785

[12]

HUGUS ZZ, 1971, J PHYS CHEM-US, V75, P2954

[13] SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS [J].

HUNG, LS ;

KENNEDY, EF ;

PALMSTROM, CJ ;

OLOWOLAFE, JO ;

MAYER, JW ;

RHODES, H .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :236-238

[14]

Joreskog K.G., 1976, GEOLOGICAL FACTOR AN

[15]

Malinowski E. R., 1980, FACTOR ANAL CHEM, V3

[16] CHEMICAL-REACTION AND SILICIDE FORMATION AT THE PT/SI INTERFACE [J].

MATZ, R ;

PURTELL, RJ ;

YOKOTA, Y ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :253-258

[17] STRUCTURE AND GROWTH OF THE INTERFACE OF PD ON A-SI-H [J].

NEMANICH, RJ ;

TSAI, CC ;

SIGMON, TW .

PHYSICAL REVIEW B, 1981, 23 (12) :6828-6831

[18] INITIAL REACTIONS AT THE INTERFACE OF PT AND AMORPHOUS-SILICON [J].

NEMANICH, RJ ;

THOMPSON, MJ ;

JACKSON, WB ;

TSAI, CC ;

STAFFORD, BL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :519-523

[19] INTERFERENCE ENHANCED RAMAN-SCATTERING STUDY OF THE INTERFACIAL REACTION OF PD ON A-SI-H [J].

NEMANICH, RJ ;

TSAI, CC ;

THOMPSON, MJ ;

SIGMON, TW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :685-688

[20] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW B, 1981, 24 (06) :3354-3359

← 1 2 3 →