CONTINUOUS ROOM-TEMPERATURE OPERATION OF AN INGAAS-GAAS-ALGAAS STRAINED-LAYER LASER

被引：35

作者：

YANG, YJ

HSIEH, KY

KOLBAS, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.98479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：215 / 217

页数：3

共 24 条

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[2]

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[6] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

CAMRAS, MD ;

BROWN, JM ;

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[7] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[8] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

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