QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

MCELHINNEY, M

SKURAS, E

HOLMES, SN

JOHNSON, EA

LONG, AR

STANLEY, CR

机构：

[1] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW G12 8QQ,LANARK,SCOTLAND

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT PHYS,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00909-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of high quality delta-doped In-0.53,Ga0.47As samples have been grown lattice matched to InP with design doping densities in the range 2 x 10(12) to 5 x 10(12) cm(-2). Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.

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页码：266 / 270

页数：5

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