LAYER DISORDERING OF GAAS-ALGAAS SUPERLATTICES BY DIFFUSION OF LASER-INCORPORATED SI

被引：9

作者：

EPLER, JE

PONCE, FA

ENDICOTT, FJ

PAOLI, TL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3439 / 3444

页数：6

共 21 条

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[5]

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[6] LOW-THRESHOLD GAIN-GUIDED COUPLED-STRIPE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED PROCESSING [J].

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PAOLI, TL .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :558-560

[7] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J].

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[8] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALGAAS DIODE-LASERS BY ANISOTROPIC DIFFUSION OF LASER-INCORPORATED SI [J].

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[9] LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING [J].

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[10] SILICON DIODES MADE BY LASER IRRADIATION [J].

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