GROWTH OF ANODIC OXIDES ON REACTIVELY SPUTTERED TINX FILMS

被引：11

作者：

MONTERO, I

JIMENEZ, C

ALBELLA, JM

PERRIERE, J

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,E-28049 MADRID,SPAIN

[2] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 06期

关键词：

D O I：

10.1002/sia.740200603

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The anodic oxidation behaviour of reactively sputtered titanium nitride thin films deposited onto silicon substrates has been investigated in order to obtain oxynitride layers at room temperature. It has been found that small differences in the stoichiometry of the titanium nitride films may give rise to large changes in the reactivity with oxygen. Thus, a strong influence of N/Ti atomic ratio value on the oxidation kinetics is observed. Analysis of the films by Rutherford backscattering and secondary ion mass spectroscopy reveals that the oxide structure is formed by an outer oxidized thin layer composed of a mixture of TiO2 + TiN(x) followed by a thicker layer with oxygen atoms dissolved in the previously deposited layer of titanium nitride. After prolonged oxidation, no nitrogen is detected in the surface layer, which is only composed of TiO2. Interestingly, the thickness of the outer layer is almost independent of the formation voltage and the anodization current.

引用

页码：503 / 507

页数：5

共 13 条

[1] ELECTRON INJECTION AND AVALANCHE DURING THE ANODIC-OXIDATION OF TANTALUM [J].

ALBELLA, JM ;

MONTERO, I ;

MARTINEZDUART, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1101-1104

[2] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[3] LOW-TEMPERATURE OXIDATION BEHAVIOR OF REACTIVELY SPUTTERED TIN BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND CONTACT RESISTANCE MEASUREMENTS [J].

ERNSBERGER, C ;

NICKERSON, J ;

SMITH, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2784-2788

[4] ANODIC-OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND PROPERTIES OF OXIDE [J].

HASEGAWA, H ;

ARIMOTO, S ;

NANJO, J ;

YAMAMOTO, H ;

OHNO, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) :424-431

[5] SURFACE CHARACTERIZATION AND ELECTROCHEMICAL-BEHAVIOR OF NITROGEN-IMPLANTED AND CARBON-IMPLANTED TITANIUM [J].

HEIDE, N ;

SIEMENSMEYER, B ;

SCHULTZE, JW .

SURFACE AND INTERFACE ANALYSIS, 1992, 19 (1-12) :423-429

[6] SURFACE OXIDATION OF TINX FILMS [J].

MONTERO, I ;

JIMENEZ, C ;

PERRIERE, J .

SURFACE SCIENCE, 1991, 251 :1038-1043

[7] STRUCTURE AND PROPERTIES OF TIN COATINGS [J].

SUNDGREN, JE .

THIN SOLID FILMS, 1985, 128 (1-2) :21-44

[8] THERMAL-OXIDATION OF REACTIVELY SPUTTERED TITANIUM NITRIDE AND HAFNIUM NITRIDE FILMS [J].

SUNI, I ;

SIGURD, D ;

HO, KT ;

NICOLET, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1210-1214

[9] NITROGEN, OXYGEN, AND ARGON INCORPORATION DURING REACTIVE SPUTTER DEPOSITION OF TITANIUM NITRIDE [J].

WILLIAMS, DS ;

BAIOCCHI, FA ;

BEAIRSTO, RC ;

BROWN, JM ;

KNOELL, RV ;

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1723-1729

[10] PROPERTIES AND MICROELECTRONIC APPLICATIONS OF THIN-FILMS OF REFRACTORY-METAL NITRIDES [J].

WITTMER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (04) :1797-1803

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