CALCULATION OF THE ELECTRON WAVE-FUNCTION IN A GRADED-CHANNEL DOUBLE-HETEROJUNCTION MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：3

作者：

MUI, DSL

PATIL, MB

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1223 / 1225

页数：3

共 9 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[3] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J].

DRUMMOND, TJ ;

MASSELINK, WT ;

MORKOC, H .

PROCEEDINGS OF THE IEEE, 1986, 74 (06) :773-822

[4] DC AND MICROWAVE CHARACTERISTICS OF A HIGH-CURRENT DOUBLE INTERFACE GAAS/INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

KLEM, J ;

PENG, CK ;

GEDYMIN, JS ;

KOPP, W ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1080-1082

[5] DETERMINATION OF CARRIER SATURATION VELOCITY IN HIGH-PERFORMANCE INYGA1-YAS/ALXGA1-XAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS (0 LESS-THAN-OR-EQUAL-TO-Y LESS-THAN-OR-EQUAL-TO-0.2) [J].

HENDERSON, TS ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :288-290

[6] LOW-NOISE BEHAVIOR OF INGAAS QUANTUM-WELL-STRUCTURED MODULATION-DOPED FETS FROM 10-2 TO 108 HZ [J].

LIU, SMJ ;

DAS, MB ;

PENG, CK ;

KLEM, J ;

HENDERSON, TS ;

KOPP, WF ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :576-582

[7]

PATIL MB, IN PRESS SOLID STATE

[8] REALIZATION OF A QUASI-3-DIMENSIONAL MODULATION-DOPED SEMICONDUCTOR STRUCTURE [J].

SHAYEGAN, M ;

SAJOTO, T ;

SANTOS, M ;

SILVESTRE, C .

APPLIED PHYSICS LETTERS, 1988, 53 (09) :791-793

[9] ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES [J].

WALUKIEWICZ, W ;

RUDA, HE ;

LAGOWSKI, J ;

GATOS, HC .

PHYSICAL REVIEW B, 1984, 30 (08) :4571-4582

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