GENERATION OF DIVACANCIES IN TIN-DOPED SILICON

被引：39

作者：

SVENSSON, BG

SVENSSON, J

LINDSTROM, JL

DAVIES, G

CORBETT, JW

机构：

[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[3] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[4] NATL DEF RES INST,S-58111 LINKOPING,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2257 / 2259

页数：3

共 12 条

[1]

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[2] TIN AS A VACANCY TRAP IN SILICON AT ROOM-TEMPERATURE [J].

BRELOT, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :220-223

[3]

Brelot A., 1973, C SERIES I PHYSICS, P191

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

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CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[5] SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION [J].

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[6]

CORBIN A, 1975, ENDOCR RES COMMUN, V2, P1

[7]

LINDSTROM JL, 1982, J APPL PHYS 1, V53, P8686

[8] GENERATION OF DIVACANCIES IN SILICON IRRADIATED BY 2-MEV ELECTRONS - DEPTH AND DOSE DEPENDENCE [J].

SVENSSON, BG ;

WILLANDER, M .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2758-2762

[9]

SVENSSON JSE, UNPUB

[10] DEFECT DISTRIBUTION NEAR-SURFACE OF ELECTRON-IRRADIATED SILICON [J].

WANG, KL ;

LEE, YH ;

CORBETT, JW .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :547-548

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