ORIGIN AND REDUCTION OF INTERFACIAL BORON SPIKES IN SILICON MOLECULAR-BEAM EPITAXY

被引：31

作者：

IYER, SS

DELAGE, SL

SCILLA, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.99420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：486 / 488

页数：3

共 14 条

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[5]

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[6]

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