STRAINED SINGLE QUANTUM-WELL (SSQW) GAINP/AIINP VISIBLE LASERS FABRICATED BY NOVEL SHUTTER CONTROL METHOD IN GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：8

作者：

NOMURA, I ^{[1
]}

KISHINO, K ^{[1
]}

KANEKO, Y ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECT & ELECTR ENGN,7-1 KIOI CHO,CHIYODA KU,TOKYO 102,JAPAN

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 09期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel shutter control method for growing GaInP strained layers without growth interruption by gas source molecular beam epitaxy (GSMBE) is presented. By using the method, strained single quantum well (SSQW) GaInP/AlInP visible lasers were fabricated by GSMBE, for the first time. The threshold current density of the laser was 329 A/cm2 for the compressive strained case (700 nm in wavelength) and 1.7 kA/cm2 for the tensile strained case (634 nm).

引用

页码：851 / 853

页数：3

共 11 条

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ELECTRONICS LETTERS, 1991, 27 (14) :1301-1303

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ELECTRONICS LETTERS, 1991, 27 (24) :2245-2246

[9] LOW THRESHOLD CURRENT-DENSITY (760 A/CM2) AND HIGH-POWER (45 MW) OPERATION OF STRAINED GA0.42IN0.58P MULTIQUANTUM WELL LASER-DIODES EMITTING AT 632 NM [J].

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ELECTRONICS LETTERS, 1991, 27 (21) :1915-1916

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