UNINTENTIONAL AS INCORPORATION IN MOLECULAR-BEAM EPITAXIALLY GROWN INAS/ALSB/GASB HETEROSTRUCTURES

被引：9

作者：

SCHMITZ, J

WAGNER, J

MAIER, M

OBLOH, H

KOIDL, P

RALSTON, JD

机构：

[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, D-79108

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 11期

关键词：

ALSB/INAS/GASB; HETEROSTRUCTURES; MBE; VALVED AS CRACKER;

D O I：

10.1007/BF02649970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate unintentional arsenic incorporation during the molecular-beam epitaxial growth of AlSb/InAs/GaSb heterostructures, using both a standard As, evaporation cell and a valved arsenic cracker. When a standard As, cell is used, unintentional arsenic concentrations as large as 10-20% can be incorporated into the AlSb and GaSb layers from the background As ambient in the growth chamber, both during growth and on stationary surfaces. This incorporation can be controlled and suppressed with the use of a valved As cracker. Suppression of the As background substantially improves the electrical transport properties of AlSb/InAs/AlSb quantum well structures.

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页码：1203 / 1207

页数：5

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