LASER PROCESSING IN THE PREPARATION OF SILICON SOLAR-CELLS

被引：12

作者：

MULLER, JC

FOGARASSY, E

SALLES, D

STUCK, R

SIFFERT, PM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：815 / 821

页数：7

共 31 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[4] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J].

BEAN, JC ;

LEAMY, HJ ;

POATE, JM ;

ROZGONYI, GA ;

SHENG, TT ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :227-230

[5] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].

BELL, RO ;

TOULEMONDE, M ;

SIFFERT, P .

APPLIED PHYSICS, 1979, 19 (03) :313-319

[6]

BELL RO, 1979, APR P EUR PHOT SOL E, P153

[7] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J].

BURRILL, JT ;

KING, WJ ;

HARRISON, S ;

MCNALLY, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :10-+

[8]

CAMPISANO SU, 1978, AUG P LAS EFF ION IM, P139

[9]

CEMBALI F, 1978, SEP P INT C ION BEAM, P859

[10]

FABRE E, 1977, SEP P INT C LUX, P249

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