NEW RAPID THERMAL ANNEALING FOR GAAS DIGITAL INTEGRATED-CIRCUITS

被引：24

作者：

TAMURA, A

UENOYAMA, T

NISHII, K

INOUE, K

ONUMA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1102 / 1107

页数：6

共 9 条

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[6] ANALYSIS OF HIGH-SPEED GAAS SOURCE-COUPLED FET LOGIC-CIRCUITS [J].

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SUDO, T .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (01) :5-10

[7] A GAAS MONOLITHIC FREQUENCY-DIVIDER USING SOURCE COUPLED FET LOGIC [J].

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[8] HIGH-TRANSCONDUCTANCE ENHANCEMENT-MODE GAAS-MESFET FABRICATION TECHNOLOGY [J].

ONUMA, T ;

TAMURA, A ;

UENOYAMA, T ;

TSUJII, H ;

NISHII, K ;

YAGITA, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) :409-411

[9]

TAMURA A, 1986, SEMIINSULATING 3 5 M, P255

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