ETCH RATE DISTRIBUTION OVER SILICON-WAFERS IN EPW SOLUTIONS

被引：4

作者：

MATSUOKA, M

ARAI, Y

YOSHIDA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 05期

关键词：

D O I：

10.1143/JJAP.27.784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：784 / 789

页数：6

共 7 条

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].

BASSOUS, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1178-1185

[2] FABRICATION OF HIGH PRECISION NOZZLES BY ANISOTROPIC ETCHING OF (100) SILICON [J].

BASSOUS, E ;

BARAN, EF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) :1321-1327

[3] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[4] ETHYLENE DIAMINE-CATECHOL-WATER MIXTURE SHOWS PREFERENTIAL ETCHING OF P-N JUNCTION [J].

GREENWOOD, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) :1325-+

[5] SILICON AS A MECHANICAL MATERIAL [J].

PETERSEN, KE .

PROCEEDINGS OF THE IEEE, 1982, 70 (05) :420-457

[6] (100) SILICON ETCH-RATE DEPENDENCE ON BORON CONCENTRATION IN ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J].

RALEY, NF ;

SUGIYAMA, Y ;

VANDUZER, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) :161-171

[7] CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J].

REISMAN, A ;

BERKENBLIT, M ;

CHAN, SA ;

KAUFMAN, FB ;

GREEN, DC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1406-1415

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