HETEROEPITAXIAL GROWTH OF GAAS FILMS ON CAF2/SI(511) STRUCTURES PREPARED WITH RAPID THERMAL ANNEALING

被引：3

作者：

ASANO, T

ISHIWARA, H

FURUKAWA, S

机构：

[1] TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

[2] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.1784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1784 / 1788

页数：5

共 9 条

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[3]

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[5] ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY OF GAAS FILMS ON CAF2/SI STRUCTURES [J].

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[6] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

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[7] USE OF A RAPID ANNEAL TO IMPROVE CAF2-SI (100) EPITAXY [J].

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[8]

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[9] GROWTH OF SINGLE DOMAIN GAAS FLUORIDE SI STRUCTURES [J].

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JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :398-402

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