共 33 条
[3]
STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1014-1021
[8]
INFLUENCE OF SURFACE STEP DENSITY ON REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION SPECULAR INTENSITY DURING EPITAXIAL-GROWTH
[J].
PHYSICAL REVIEW B,
1987, 36 (17)
:9312-9314