CHARACTERISTICS OF SI-DOPED GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING A SILANE SOURCE

被引：9

作者：

LIU, CW

CHEN, SL

LAY, JP

LEE, SC

LIN, HH

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1634 / 1636

页数：3

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[11] ON THE REACTION-MECHANISM OF GAAS MOCVD [J].

NISHIZAWA, J ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417

[12] SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

OKAMOTO, K ;

ONOZAWA, S ;

IMAI, T .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2993-2995

[13] LIQUID-PHASE EPITAXIAL-GROWTH OF 6-LAYER GAAS-(GAAL)AS STRUCTURES FOR INJECTION LASERS WITH 0.04 MU-M THICK CENTER LAYER [J].

THOMPSON, GH ;

KIRKBY, PA .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :70-85

[14] A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS [J].

VEUHOFF, E ;

KUECH, TF ;

MEYERSON, BS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1958-1961

[15] CRYSTAL ORIENTATION DEPENDENCE OF SILICON DOPING IN MOLECULAR-BEAM EPITAXIAL ALGAAS/GAAS HETEROSTRUCTURES [J].

WANG, WI ;

MENDEZ, EE ;

KUAN, TS ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :826-828