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RAPID THERMAL NITRIDATION OF SIO2-FILMS
被引:10
作者
:
ELFERINK, JBO
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC VZW,B-3030 LOUVAIN,BELGIUM
IMEC VZW,B-3030 LOUVAIN,BELGIUM
ELFERINK, JBO
[
1
]
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC VZW,B-3030 LOUVAIN,BELGIUM
IMEC VZW,B-3030 LOUVAIN,BELGIUM
HABRAKEN, FHPM
[
1
]
VANDERWEG, WF
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC VZW,B-3030 LOUVAIN,BELGIUM
IMEC VZW,B-3030 LOUVAIN,BELGIUM
VANDERWEG, WF
[
1
]
DOOMS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC VZW,B-3030 LOUVAIN,BELGIUM
IMEC VZW,B-3030 LOUVAIN,BELGIUM
DOOMS, E
[
1
]
HEYNS, M
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC VZW,B-3030 LOUVAIN,BELGIUM
IMEC VZW,B-3030 LOUVAIN,BELGIUM
HEYNS, M
[
1
]
DEKEERSMAECKER, R
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC VZW,B-3030 LOUVAIN,BELGIUM
IMEC VZW,B-3030 LOUVAIN,BELGIUM
DEKEERSMAECKER, R
[
1
]
机构
:
[1]
IMEC VZW,B-3030 LOUVAIN,BELGIUM
来源
:
APPLIED SURFACE SCIENCE
|
1989年
/ 39卷
/ 1-4期
关键词
:
D O I
:
10.1016/0169-4332(89)90436-4
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:219 / 226
页数:8
相关论文
共 19 条
[1]
OXIDATION OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILMS
DENISSE, CMM
论文数:
0
引用数:
0
h-index:
0
DENISSE, CMM
SMULDERS, HE
论文数:
0
引用数:
0
h-index:
0
SMULDERS, HE
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
HABRAKEN, FHPM
VANDERWEG, WF
论文数:
0
引用数:
0
h-index:
0
VANDERWEG, WF
[J].
APPLIED SURFACE SCIENCE,
1989,
39
(1-4)
: 25
-
32
[2]
DUNSELMAN CPM, 1987, MRS B, V12, P35
[3]
HYDROGEN CONTENT OF THERMALLY NITRIDED THIN SILICON DIOXIDE FILMS
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
机构:
STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS
HABRAKEN, FHPM
EVERS, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS
EVERS, EJ
KUIPER, AET
论文数:
0
引用数:
0
h-index:
0
机构:
STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS
KUIPER, AET
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(01)
: 62
-
64
[4]
THERMAL NITRIDATION OF SILICON DIOXIDE FILMS
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
HABRAKEN, FHPM
KUIPER, AET
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
KUIPER, AET
TAMMINGA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
TAMMINGA, Y
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: 6996
-
7002
[5]
HEIJNS M, 1989, IN PRESS INFOS 89
[6]
SILICON OXYNITRIDE FILMS PREPARED BY PLASMA NITRIDATION OF SILICON AND THEIR APPLICATION FOR TUNNEL METAL-INSULATOR-SILICON DIODES
HEZEL, R
论文数:
0
引用数:
0
h-index:
0
HEZEL, R
MEISEL, T
论文数:
0
引用数:
0
h-index:
0
MEISEL, T
STREB, W
论文数:
0
引用数:
0
h-index:
0
STREB, W
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
56
(06)
: 1756
-
1761
[7]
EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(01)
: 184
-
188
[8]
ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 498
-
502
[9]
SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS
KAGA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
KAGA, T
HAGIWARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
HAGIWARA, T
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1988,
35
(07)
: 929
-
934
[10]
THERMAL NITRIDATION OF SIO2 THIN-FILMS ON SI AT 1150-DEGREES-C
KOBA, R
论文数:
0
引用数:
0
h-index:
0
机构:
Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA
KOBA, R
TRESSLER, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA
TRESSLER, RE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(01)
: 144
-
150
←
1
2
→
共 19 条
[1]
OXIDATION OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILMS
DENISSE, CMM
论文数:
0
引用数:
0
h-index:
0
DENISSE, CMM
SMULDERS, HE
论文数:
0
引用数:
0
h-index:
0
SMULDERS, HE
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
HABRAKEN, FHPM
VANDERWEG, WF
论文数:
0
引用数:
0
h-index:
0
VANDERWEG, WF
[J].
APPLIED SURFACE SCIENCE,
1989,
39
(1-4)
: 25
-
32
[2]
DUNSELMAN CPM, 1987, MRS B, V12, P35
[3]
HYDROGEN CONTENT OF THERMALLY NITRIDED THIN SILICON DIOXIDE FILMS
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
机构:
STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS
HABRAKEN, FHPM
EVERS, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS
EVERS, EJ
KUIPER, AET
论文数:
0
引用数:
0
h-index:
0
机构:
STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS
KUIPER, AET
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(01)
: 62
-
64
[4]
THERMAL NITRIDATION OF SILICON DIOXIDE FILMS
HABRAKEN, FHPM
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
HABRAKEN, FHPM
KUIPER, AET
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
KUIPER, AET
TAMMINGA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
TAMMINGA, Y
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: 6996
-
7002
[5]
HEIJNS M, 1989, IN PRESS INFOS 89
[6]
SILICON OXYNITRIDE FILMS PREPARED BY PLASMA NITRIDATION OF SILICON AND THEIR APPLICATION FOR TUNNEL METAL-INSULATOR-SILICON DIODES
HEZEL, R
论文数:
0
引用数:
0
h-index:
0
HEZEL, R
MEISEL, T
论文数:
0
引用数:
0
h-index:
0
MEISEL, T
STREB, W
论文数:
0
引用数:
0
h-index:
0
STREB, W
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
56
(06)
: 1756
-
1761
[7]
EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(01)
: 184
-
188
[8]
ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 498
-
502
[9]
SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS
KAGA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
KAGA, T
HAGIWARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
HAGIWARA, T
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1988,
35
(07)
: 929
-
934
[10]
THERMAL NITRIDATION OF SIO2 THIN-FILMS ON SI AT 1150-DEGREES-C
KOBA, R
论文数:
0
引用数:
0
h-index:
0
机构:
Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA
KOBA, R
TRESSLER, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA
TRESSLER, RE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(01)
: 144
-
150
←
1
2
→