EFFECTS OF SULFUR PASSIVATION AND RAPID THERMAL ANNEALING ON THE ELECTRICAL-PROPERTIES OF INP METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY DIODES

被引：9

作者：

EFTEKHARI, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3214 / 3217

页数：4

共 29 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[2] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[3] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

DUNGAN, TE .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :66-68

[4] MEASUREMENT OF REDUCED SURFACE-BARRIER HEIGHT IN SULFUR PASSIVATED INP AND GAAS USING RAMAN-SPECTROSCOPY [J].

CHEN, X ;

SI, X ;

MALHOTRA, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (07) :2085-2088

[5] THERMAL-STABILITY OF SILICIDE CONTACTS ON GAAS USING THE PROXIMITY TECHNIQUE DURING RAPID THERMAL ANNEALING [J].

EFTEKHARI, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (03) :193-195

[6] ELECTRICAL-PROPERTIES OF INP MIS DEVICES [J].

EFTEKHARI, G ;

TUCK, B ;

DECOGAN, D .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (06) :1099-1107

[7] CHARACTERIZATION OF TRAP SITES IN THIN OXIDE ON SULFUR-PASSIVATED INP [J].

EFTEKHARI, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (01) :K59-K61

[8] EFFECT OF RAPID THERMAL ANNEALING ON THE BARRIER HEIGHT OF METAL GAAS WITH SELENIUM INTERFACIAL LAYER [J].

EFTEKHARI, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (01) :K77-K79

[9] SULFUR AS A SURFACE PASSIVATION FOR INP [J].

IYER, R ;

CHANG, RR ;

LILE, DL .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :134-136

[10] ELECTRONIC-PROPERTIES OF SE-TREATED SIO2/GAAS INTERFACES [J].

KIKAWA, T ;

TAKATANI, S ;

TEZEN, Y .

APPLIED PHYSICS LETTERS, 1992, 60 (22) :2785-2787

← 1 2 3 →