ELECTROREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF IN1-XGAXP1-YASY LATTICE-MATCHED TO GAAS

被引：4

作者：

SHIRAKATA, S

KONDO, M

NISHINO, T

HAMAKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 03期

关键词：

D O I：

10.1143/JJAP.25.435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：435 / 439

页数：5

共 33 条

[11] LPE GROWTH OF IN0.48GA0.52AS0.01P0.99 LATTICE-MATCHED TO GAAS FROM AN IN MELT RICH IN P [J].

KAWANISHI, H ;

HIRAOKA, M ;

YOSHIOKA, K ;

NISHIO, K ;

NAKAGOMI, T ;

TANAKA, S .

ELECTRONICS LETTERS, 1982, 18 (09) :384-385

[12] A STUDY ON LPE GROWTH OF IN1-XGAXP1-YASY(YCONGRUENT-TO0) ON (100) GAAS SUBSTRATE [J].

KONDO, M ;

SHIRAKATA, S ;

TSUSHI, A ;

NISHINO, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07) :806-811

[13] ELECTROREFLECTANCE INVESTIGATION OF IN1-XGAXASYP1-Y LATTICE-MATCHED TO INP [J].

LAUFER, PM ;

POLLAK, FH ;

NAHORY, RE ;

POLLACK, MA .

SOLID STATE COMMUNICATIONS, 1980, 36 (05) :419-422

[14]

LODOWISE MJ, 1983, 1982 P INT S GALL AR, P93

[15] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

MOON, RL ;

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) :635-644

[16] LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV [J].

MUKAI, S ;

MATSUZAKI, M ;

SHIMADA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) :L505-L508

[17] PHOTO-LUMINESCENT AND ELECTRICAL-PROPERTIES OF INGAP AS MIXED-CRYSTALS LIQUID-PHASE-EPITAXIALLY GROWN ON (100) GAAS [J].

MUKAI, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2635-2645

[18] FABRICATION AND VISIBLE-LIGHT-EMISSION CHARACTERISTICS OF ROOM-TEMPERATURE-OPERATED INGAPAS DH DIODE-LASERS GROWN ON GAAS SUBSTRATES [J].

MUKAI, S ;

YAJIMA, H ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L729-L732

[19] LPE GROWTH OF IN1-XGAXP1-ZASZ (Z LESS THAN OR EQUAL TO 0.01) ON (1 0 0) GAAS SUBSTRATES AND ITS LATTICE-CONSTANTS AND PHOTO-LUMINESCENCE [J].

MUKAI, S ;

MATSUZAKI, M ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :321-327

[20] COMPOSITION DEPENDENCE OF THE BAND-GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATES [J].

NAKAJIMA, K ;

YAMAGUCHI, A ;

AKITA, K ;

KOTANI, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5944-5950

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