SELECTIVE-AREA GROWTH OF III/V MATERIALS IN METALORGANIC MOLECULAR-BEAM EPITAXY (CHEMICAL BEAM EPITAXY)

This paper describes the current status in selective area epitaxy using masked wafers in metalorganic molecular beam epitaxy (MOMBE, or chemical beam epitaxy, CBE). The surface selective growth is discussed leading to a better understanding of the growth phenomena taking place in the transition areas from growth to non-growth where crystal facets are formed. Based on this knowledge it is demonstrated that unique structures with uniform layer thickness and material compositions can be obtained, not depending on the aspect ratio of the masked area. This enables for the device designer a flexible mask layout not limited due to the growth mechanism. Finally the current knowledge on selective area growth (SAE) of device structures is highlighted by examples like monolithic integration of laser waveguides.