HIGH-CONTRAST REGISTRATION MARKS FOR ELECTRON-BEAM PATTERN EXPOSURE ON (100) SILICON

被引：5

作者：

LIDA, Y

EVERHART, TE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 03期

关键词：

Compendex;

D O I：

10.1116/1.569628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

INTEGRATED CIRCUIT MANUFACTURE

引用

页码：917 / 920

页数：4

共 10 条

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EVERHART, TE .

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