INFLUENCE OF SUBSTRATE ORIENTATION ON BE TRANSPORT DURING MOLECULAR-BEAM EPITAXY OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：6

作者：

MOCHIZUKI, K

GOTO, S

MISHIMA, T

KUSANO, C

机构：

[1] Central Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 11期

关键词：

BERYLLIUM; TRANSPORT; ANOMALOUS DIFFUSION; SURFACE SEGREGATION; SUBSTRATE ORIENTATION; ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTOR; CURRENT GAIN;

D O I：

10.1143/JJAP.31.3495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of substrate orientation on Be transport during GaAs molecular beam epitaxy is evaluated by secondary ion mass spectrometry and from the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The Be doping level employed is from 2 x 10(19) cm-3 to 9 x 10(19) cm-3. The Be transport for the conventional (100) orientation increases rapidly with the increase of growth temperature (T(s)) from 530-degrees-C to 630-degrees-C. With substrate misorientation from (100) toward (111)A, however, Be transport is decreased at T(s) = 630-degrees-C, and reaches a minimum with (311)A orientation. The maximum current gain of AlGaAs/GaAs HBTs grown at T(s) = 560-degrees-C is 264 for (411)A orientation and 3 for (100) orientation, which confirms the applicability of substrate orientations other than the conventional (100) one for obtaining a sharp Be profile.

引用

页码：3495 / 3499

页数：5

共 24 条

[1] USE OF MOLECULAR-BEAM EPITAXY FOR THE ACHIEVEMENT OF LOW RESISTANCE INTER-CELL CONTACTS IN MULTIBAND GAP SOLAR-CELLS [J].

BOUCHAIB, P ;

CONTOUR, JP ;

RAYMOND, F ;

VERIE, C ;

DAVITAYA, FA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :145-147

[2] BERYLLIUM DIFFUSION ACROSS GAAS/(AL,GA)AS HETEROJUNCTIONS AND GAAS/ALAS SUPERLATTICES DURING MBE GROWTH [J].

DEVINE, RLS ;

FOXON, CT ;

JOYCE, BA ;

CLEGG, JB ;

GOWERS, JP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02) :195-200

[3] ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENQUIST, P ;

WICKS, GW ;

EASTMAN, LF ;

HITZMAN, C .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4130-4134

[4] BE DOPING EFFECT ON GROWTH-KINETICS OF GAAS GROWN BY MBE [J].

IIMURA, Y ;

KAWABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L81-L84

[5] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[6] GENERATION-RECOMBINATION CURRENT IN THE EMITTER-BASE JUNCTION OF ALGAAS/GAAS HBTS [J].

ITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (09) :1400-1404

[7] INTERPLAY OF BERYLLIUM SEGREGATION AND DIFFUSION IN HEAVILY DOPED GAAS AND ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY (THERMODYNAMIC ANALYSIS) [J].

IVANOV, SV ;

KOPEV, PS ;

LEDENTSOV, NN .

JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) :661-669

[8] GROWTH TEMPERATURE-DEPENDENCE OF DISORDERINGS IN A BE-DOPED GAAS/ALAS MULTILAYERED STRUCTURE [J].

KAMATA, N ;

KOBAYASHI, K ;

ENDO, K ;

SUZUKI, T ;

MISU, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07) :1092-1096

[9] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J].

KAWABE, M ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :849-850

[10] THE EFFECT ON TURN-ON VOLTAGE (VBE) OF ALGAAS GAAS HBTS DUE TO THE STRUCTURE OF THE EMITTER-BASE HETEROJUNCTION [J].

KUSANO, C ;

MASUDA, H ;

MOCHIZUKI, K ;

KAWADA, M ;

MITANI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (08) :1399-1402

← 1 2 3 →