QUANTITATIVE ASSESSMENT OF BE ACCEPTORS IN GAAS BY LOCAL VIBRATIONAL-MODE SPECTROSCOPY

被引：24

作者：

WAGNER, J

MAIER, M

MURRAY, R

NEWMAN, RC

BEALL, RB

HARRIS, JJ

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,INTERDISCIPLINARY RES CTR,LONDON SW7 2BZ,ENGLAND

[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.347289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Be-doped epitaxial layers of GaAs grown by molecular beam epitaxy have been studied by local vibrational mode spectroscopy combining infrared absorption and Raman scattering. Calibration factors for both experimental techniques have been derived which enable quantitative assessments to be made of the concentrations of Be acceptors in GaAs. In Raman spectroscopy the detection limit is almost-equal-to 3 x 10(18) cm-3 for as-grown layers only 10 nm in thickness.

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页码：971 / 974

页数：4

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