MICRO MICROCAVITY METHOD APPLIED TO THE STUDY OF THE STEP COVERAGE FORMATION MECHANISM OF SIO2-FILMS BY LPCVD

被引:67
作者
WATANABE, K
KOMIYAMA, H
机构
[1] Department of Chemical Engineering, Faculty of Engineering, University of Tokyo, Tokyo 113, Hongo, Bunkyo-ku
关键词
D O I
10.1149/1.2086636
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The step coverage of submicron trenches by silica films formed by low-pressure chemical vapor deposition is studied, using a novel approach called the “micro/macrocavity method” that analyzes simultaneously the growth rate profiles at millimeter and submicron scales. A mechanism is strongly indicated in which the step coverage quality is governed by the diffusion rate and sticking coefficient of only one reaction intermediate, produced from silane and oxygen in the gas phase. The step coverage is experimentally correlated with temperature, shape, and size of the trench, and is reasonably interpreted by the mechanism proposed. An approximation method for quick estimation of the step coverage is proposed. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:1222 / 1227
页数:6
相关论文
共 26 条
[1]   GROWTH OF SILICA AND PHOSPHOSILICATE FILMS [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :990-994
[2]   PECVD OXIDE STEP-COVERAGE CONSIDERATIONS FOR USE AS AN INTERLAYER DIELECTRIC IN CMOS DLM PROCESSING [J].
BRADER, SJH ;
QUINLAN, SC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) :2291-2294
[3]   SILANE OXIDATION STUDY - ANALYSIS OF DATA FOR SIO2-FILMS DEPOSITED BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION [J].
COBIANU, C ;
PAVELESCU, C .
THIN SOLID FILMS, 1984, 117 (03) :211-216
[4]   EFFICIENCY OF THE SIH4 OXIDATION REACTION IN CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS AT LOW-TEMPERATURE [J].
COBIANU, C ;
PAVELESCU, C .
THIN SOLID FILMS, 1983, 102 (04) :361-366
[5]   A THEORETICAL-STUDY OF THE LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS [J].
COBIANU, C ;
PAVELESCU, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1888-1893
[6]   The oxidation of the silicon hydrides. Part II [J].
Emeleus, HJ ;
Stewart, K .
JOURNAL OF THE CHEMICAL SOCIETY, 1936, :677-684
[7]   The oxidation of the silicon hydrides. Part I. [J].
Emeleus, HJ ;
Stewart, K .
JOURNAL OF THE CHEMICAL SOCIETY, 1935, :1182-1189
[8]  
GOLDSMITH N, 1967, RCA REV, V28, P153
[9]   THE KINETICS OF SILICON DIOXIDE CHEMICAL VAPOR-DEPOSITION .3. EXPERIMENTAL-VERIFICATION OF THE MODEL [J].
GRABIEC, PB ;
PRZYLUSKI, J .
SURFACE & COATINGS TECHNOLOGY, 1986, 27 (03) :219-237
[10]   THE KINETICS OF SILICON DIOXIDE CHEMICAL VAPOR-DEPOSITION .2. THE MODEL OF THE PROCESS [J].
GRABIEC, PB ;
PRZYLUSKI, J .
SURFACE TECHNOLOGY, 1985, 25 (04) :315-325