THE EFFECT OF HIGH-TEMPERATURE ANNEALING ON THE SPATIAL VARIATION OF BULK LIFETIME NEAR THE SI-SIO2 INTERFACE

被引：13

作者：

MANCHANDA, L

VASI, J

BHATTACHARYYA, AB

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 10期

关键词：

D O I：

10.1016/0038-1101(80)90177-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1015 / 1020

页数：6

共 32 条

[1] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[2] FIELD-ENHANCED CARRIER GENERATION IN MOS CAPACITORS [J].

CALZOLARI, PU ;

GRAFFI, S ;

MORANDI, C .

SOLID-STATE ELECTRONICS, 1974, 17 (10) :1001-1011

[3] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[4] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES [J].

DECLERCK, GJ ;

HATTORI, T ;

MAY, GA ;

BEAUDOUIN, J ;

MEINDL, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :436-439

[5]

FREZEL M, 1979, THIN SOLID FILMS, V58, P301

[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[7] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION [J].

HATTORI, T .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :312-314

[8] INFLUENCE OF TRICHLOROETHYLENE ON SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS [J].

HATTORI, T .

DENKI KAGAKU, 1978, 46 (02) :122-127

[9] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION [J].

HATTORI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :945-946

[10]

HESS DW, 1975, J ELECTROCHEM SOC, V122, P1123, DOI 10.1149/1.2134407

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