INFLUENCE OF TRICHLOROETHYLENE ON SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS

被引：7

作者：

HATTORI, T

机构：

来源：

DENKI KAGAKU | 1978年 / 46卷 / 02期

关键词：

D O I：

10.5796/kogyobutsurikagaku.46.122

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：122 / 127

页数：6

共 26 条

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J].

BOOKER, GR ;

TUNSTALL, WJ .

PHILOSOPHICAL MAGAZINE, 1966, 13 (121) :71-&

[2] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES [J].

DECLERCK, GJ ;

HATTORI, T ;

MAY, GA ;

BEAUDOUIN, J ;

MEINDL, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :436-439

[3] OXIDATION-VACANCY PRODUCTION IN ALUMINIUM ALLOYS [J].

DOBSON, PS ;

KRITZINGER, S ;

SMALLMAN, RE .

PHILOSOPHICAL MAGAZINE, 1968, 17 (148) :769-+

[4] ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION [J].

HASHIMOTO, H ;

SHIBAYAMA, H ;

MASAKI, H ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1899-1902

[5] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION [J].

HATTORI, T .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :312-314

[6] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION [J].

HATTORI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :945-946

[7]

HATTORI T, UNPUBLISHED

[8] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].

HIRABAYA.K ;

IWAMURA, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1595-1601

[9] VIDEO DEFECTS IN CHARGE-COUPLED IMAGE SENSORS [J].

HOKARI, Y ;

SHIRAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :585-590

[10] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :165-167

← 1 2 3 →