PARTIAL EPITAXIAL-GROWTH OF HFSI2 FILMS GROWN ON SILICON

被引：11

作者：

CHANG, CS

NIEH, CW

CHEN, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2393 / 2395

页数：3

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