CURRENT SPREADING AT CONTACTS TO PLANAR GUNN DEVICES

被引：5

作者：

LADBROOKE, PH ^{[1
]}

机构：

[1] ROY COLL SCI, ELECTR BRANCH, SWINDON, WILTSHIRE, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 01期

关键词：

D O I：

10.1109/T-ED.1973.17608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：56 / 59

页数：4

共 14 条

[1] INFLUENCE OF BOUNDARY CONDITIONS ON HIGH-FIELD DOMAINS IN GUNN DIODES [J].

BOER, KW ;

DOHLER, G .

PHYSICAL REVIEW, 1969, 186 (03) :793-&

[2] EFFECTS OF TEMPERATURE ON CONTACT RESISTANCE OF GUNN DIODES [J].

BOLTON, RMG ;

JONES, BF .

ELECTRONICS LETTERS, 1969, 5 (25) :662-+

[3] LIMITATIONS TO PERFORMANCE OF PLANAR GUNN EFFECT DEVICES [J].

COLLIVER, DJ ;

FRAY, AF .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :671-&

[4] BOUNDARY CONDITIONS AND HIGH-FIELD DOMAINS IN GAAS [J].

CONWELL, EM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :262-+

[5] RATIONAL DESIGN GUNN- AND LSA-DIODE ELECTRODES [J].

DENKER, SP .

ELECTRONICS LETTERS, 1968, 4 (14) :294-+

[6]

DIENST JF, 1967, RCA REV, V28, P585

[7] PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (04) :300-+

[8] CONTACT EFFECTS IN GUNN DIODES [J].

GURNEY, WSC .

ELECTRONICS LETTERS, 1971, 7 (24) :711-&

[9] OHMIC CONTACTS TO GAAS BY A SIMPLE LOW TEMPERATURE ALLOYING PROCESS [J].

JADUS, DK ;

REEDY, HE ;

FEUCHT, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :408-&

[10] GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS [J].

KROEMER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) :819-+

← 1 2 →