SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY

Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700-degrees-C for GaAs and 550-degrees-C for InAs with a growth rate of 0.7 mum h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out. The diffusion length of Ga on SiO2 at 700-degrees-C is estimated to be about 20 to 30 mum. The results demonstrate that selective epitaxial growth by MBE can be used as a device fabrication process where thin localized GaAs or InAs epilayers are required.