AN IMPROVED ANALYTIC MODEL FOR THE METAL INSULATOR-SEMICONDUCTOR TUNNEL JUNCTION

被引：15

作者：

CHU, KM

PULFREY, DL

机构：

[1] Univ of British Columbia, Vancouver,, BC, Can

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1656 / 1663

页数：8

共 22 条

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