CHARGE RETENTION IN SCALED SONOS NONVOLATILE SEMICONDUCTOR MEMORY DEVICES - MODELING AND CHARACTERIZATION

被引：36

作者：

HU, Y

WHITE, MH

机构：

[1] Sherman Fairchild Center for Solid State Studies, Department of Electrical Engineering and Computer Science, Lehigh University, Bethlehem

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1101(93)90049-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical model is developed to investigate the influence of the charge loss processes in the retention mode of the SONOS NVSM device. The model considers charge loss by the following processes: (1) electron back-tunneling from the nitride traps to the Si conduction band, (2) electron back-tunneling from the nitride traps to the Si/SiO2 interface traps and (3) hole injection from the Si valence band to the nitride traps. An amphoteric trap charge distribution is used in this model. The new charge retention model predicts that process (1) determines the short term retention, while processes (2) and (3) determine the long term retention. Good agreement has been reached between the results of analytical calculations and the experimental retention data on both surface channel and buried channel SONOS devices.

引用

页码：1401 / 1416

页数：16

共 37 条

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