STUDY ON RADIO-FREQUENCY REACTIVE SPUTTERING DEPOSITION OF SILICON-NITRIDE THIN-FILMS

A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied to obtain various sets of films. In analyzing the stoichiometry and thickness of the silicon nitride films by Rutherford backscattering spectroscopy, several correlations among deposition parameters and film characteristics could be found. The results can be discussed by adapting a reactive sputtering theoretical model to the present conditions. An alterative method to grow films with the same stoichiometry but under different deposition rates was tested.