FABRICATION OF SILICON MICROSTRUCTURES BASED ON SELECTIVE FORMATION AND ETCHING OF POROUS SILICON

被引：14

作者：

TU, XZ

机构：

[1] Texas A&M Univ, College Station,, TX, USA, Texas A&M Univ, College Station, TX, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期

关键词：

ETCHING - POROUS MATERIALS - Processing - SEMICONDUCTOR DEVICES - Fabrication;

D O I：

10.1149/1.2096219

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A process is described for use in silicon microstructures. This process consists of selective anodization of silicon in concentrated HF solution to form porous silicon and etching of the porous silicon in dilute NaOH solution to obtain desired microstructures. Proton implantation is employed to produce a thicker anodizable high donor concentration layer in lightly doped n-type silicon substrates, and nitrogen ion implantation is employed to create thinner highly resistive islands in the high donor concentration layer. 19 Refs.

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页码：2105 / 2107

页数：3

相关论文

共 19 条

[1] FORMATION AND PROPERTIES OF POROUS SILICON FILM [J].

ARITA, Y ;

SUNOHARA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :285-295

[2] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].

BEALE, MIJ ;

CHEW, NG ;

UREN, MJ ;

CULLIS, AG ;

BENJAMIN, JD .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88

[3]

Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7

[4] COMPLETE DIELECTRIC ISOLATION BY HIGHLY SELECTIVE AND SELF-STOPPING FORMATION OF OXIDIZED POROUS SILICON [J].

HOLMSTROM, RP ;

CHI, JY .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :386-388

[5] SCHOTTKY DIODES AND OTHER DEVICES ON THIN SILICON MEMBRANES [J].

HUANG, CL ;

VANDUZER, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :579-583

[6] FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS [J].

IMAI, K ;

UNNO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :297-302

[7] AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES [J].

JACKSON, TN ;

TISCHLER, MA ;

WISE, KD .

ELECTRON DEVICE LETTERS, 1981, 2 (02) :44-45

[8] MINIATURE CANTILEVER BEAMS FABRICATED BY ANISOTROPIC ETCHING OF SILICON [J].

JOLLY, RD ;

MULLER, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2750-2754

[9] A NEW SELF-LIMITING PROCESS FOR THE PRODUCTION OF THIN SUB-MICRON SEMICONDUCTOR-FILMS [J].

LEE, KC ;

SILCOX, J ;

LEE, CA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4035-4037

[10] NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION [J].

MITCHELL, JB ;

PRONKO, PP ;

SHEWCHUN, J ;

THOMPSON, DA ;

DAVIES, JA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :332-334