TIME-DEPENDENT RADIATION-INDUCED CHARGE EFFECTS IN WAFER-BONDED SOI BURIED OXIDES

被引：14

作者：

BOESCH, HE

TAYLOR, TL

机构：

[1] Harry Diamond Laboratories, Adelphi, MD 20783-1197

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved capacitance-voltage (C(V(g))) voltage shift measurements were performed on wafer-bonded and etched-back silicon-on-insulator (BESOI) buried oxide capacitors following their exposure to pulsed irradiation. The results and modeling show oxide hole transport and trapping and electron trapping effects that vary with postbonding anneals and with location of the wafer bonding surface.

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收藏

页码：2103 / 2113

页数：11

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