ELECTRICAL-PROPERTIES OF VACUUM ANNEALED SI SURFACES

被引：5

作者：

LIEHR, M

RENIER, M

WACHNIK, RA

WERNER, J

SCILLA, GS

HO, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574934

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2131 / 2134

页数：4

共 20 条

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[10] A SOLUTION TO BORON CONTAMINATION AT THE SUBSTRATE EPILAYER INTERFACE OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

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