METAL INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：27

作者：

ROBERTSON, AE ^{[1
]}

HULTMAN, LG ^{[1
]}

HENTZELL, HTG ^{[1
]}

HORNSTROM, SE ^{[1
]}

SHAOFANG, G ^{[1
]}

PSARAS, PA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574618

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1447 / 1450

页数：4

共 11 条

[1] HIGH-TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF RF SPUTTERED AMORPHOUS SI THIN-FILMS [J].

GREENE, JE ;

MEI, L .

THIN SOLID FILMS, 1976, 37 (03) :429-440

[2]

HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[3] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].

HIRAKI, A ;

SHUTO, K ;

KIM, S ;

KAMMURA, W ;

IWAMI, M .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612

[4]

HULTMAN LG, UNPUB J APPL PHYS

[5] NOBLE-METAL SI(111) INTERFACES STUDIED BY MEV ION-SCATTERING [J].

ITO, T ;

GIBSON, WM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :561-565

[6] ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J].

MAYER, JW ;

TSAUR, BY ;

LAU, SS ;

HUNG, LS .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1-13

[7] INTERACTION OF METAL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

OLOWOLAFE, JO ;

LAU, SS ;

NICOLET, MA ;

MAYER, JW ;

SHIMA, R .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1278-1283

[8] CHEMICAL PROFILING AND STRUCTURAL STUDIES OF ION BEAM-MIXED ALUMINUM ON SILICON [J].

NAMAVAR, F ;

BUDNICK, JI ;

OTTER, FA .

THIN SOLID FILMS, 1983, 104 (1-2) :31-41

[9] SCHOTTKY-BARRIER AMORPHOUS CRYSTALLINE INTERFACE FORMATION [J].

THOMPSON, MJ ;

NEMANICH, RJ ;

TSAI, CC .

SURFACE SCIENCE, 1983, 132 (1-3) :250-263

[10] NEW SURFACE-STRUCTURE ANALYSIS OF AG-SI PHASE BY QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY METHOD [J].

TOKUTAKA, H ;

NISHIMORI, K ;

NOMURA, S ;

TANAKA, A ;

TAKASHIMA, K .

SURFACE SCIENCE, 1982, 115 (01) :79-90

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