REDUCTION IN THE CONCENTRATION OF DX CENTERS IN SI-DOPED GAALAS USING THE PLANAR DOPING TECHNIQUE

被引：42

作者：

ETIENNE, B

THIERRYMIEG, V

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期

关键词：

D O I：

10.1063/1.99167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1237 / 1239

页数：3

共 17 条

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