CHARACTERIZATION OF BORON IMPLANTED SILICON BY X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY

Silicon samples implanted with boron ions at different doses are investigated by X‐ray double crystal (DCD) and triple crystal diffractometry (TCD) after annealing treatments. The comparison between both methods shows that the use of DCD is hardly limited to those cases where no structural defects are generated. Only TCD allows the clear proof of diffuse scattering, the registration of it with high resolution in reciprocal space, and the separation of dynamical intensities to calculate the depth profile of lattice strain and disorder. From the combination of all these measuring possibilities of TCD the depth of structural defects generated during the annealing process can be estimated. Since the strain field of structural defects is partly compensating that induced by boron atoms, the boron profile can not be determined from the resulting strain profile in such cases. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA