MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS - TECHNOLOGY AND GROWTH-PROCESS

被引：47

作者：

PLOOG, K

机构：

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1981年 / 11卷

关键词：

D O I：

10.1146/annurev.ms.11.080181.001131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：171 / 210

页数：40

相关论文

共 118 条

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[8] LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE
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