NEUTRALIZATION OF MOBILE IONS IN THE SIO2 FILM OF MOS STRUCTURES

被引:21
作者
HINO, T
YAMASHITA, K
机构
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo
关键词
D O I
10.1063/1.326553
中图分类号
O59 [应用物理学];
学科分类号
摘要
Space-charge polarization of sodium ions in the SiO2 layer of MOS structures is observed by comparing thermally stimulated currents with capacitance-voltage characteristics. The results cannot be interpreted by only a space-charge polarization of a constant excess charge. Charge exchange at the interface is suggested and this idea is supported by the results of thermally stimulated surface potentials. Further, estimation of some parameters of ions are discussed for the case when neutralization of ions occurs at the interface.
引用
收藏
页码:4879 / 4882
页数:4
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