VALIDATION OF THE CHARGE PUMPING METHOD DOWN TO LIQUID-HELIUM TEMPERATURE

被引：1

作者：

NGUYENDUC, C

GHIBAUDO, G

BALESTRA, F

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs, associé au C.N.R.S. No. 84, Grenoble

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 02期

关键词：

D O I：

10.1002/pssa.2211260237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K139 / K142

页数：4

共 9 条

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[7] EVALUATION OF CHANNEL HOT CARRIER EFFECTS IN N-MOS TRANSISTORS AT 77-K WITH THE CHARGE PUMPING TECHNIQUE [J].

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[8]

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