CHANNELING AND TEM INVESTIGATIONS OF PULSE ELECTRON-BEAM ANNEALED GAAS IMPLANTED WITH PB

被引：2

作者：

ALBERTS, HW

GAIGHER, HL

BREDELL, LJ

机构：

[1] Department of Physics, University of Pretoria, Pretoria

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)96172-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaAs single crystals were implanted at room temperature with 150 keV Pb ions with doses ranging from 1 x 10(12) to 5 x 10(16) ions cm-2. The amorphous surface layer of a crystal implanted with a dose of 1 x 10(15) cm-2 was subjected to pulsed electron beam annealing (PEBA) at energy densities up to 0.84 J cm-2. The damaged and recrystallized crystals were analyzed with backscattering and channeling of 2.0 MeV alpha-particles. The channeling results were correlated with those obtained with TEM investigations.

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页码：519 / 522

页数：4

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