EFFECT OF PHOSPHINE ON PLASMA-INDUCED TRAPS IN N-INP

被引：13

作者：

NINOMIYA, H ^{[1
]}

SUGINO, T ^{[1
]}

MATSUDA, K ^{[1
]}

SHIRAFUJI, J ^{[1
]}

机构：

[1] HORIBA LTD,MINAMI KU,KYOTO 601,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

INP; PH3; PLASMA; AR PLASMA; H2; ELECTRON TRAP; ICTS;

D O I：

10.1143/JJAP.32.L12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron traps in n-InP generated by exposure to Ar or phosphine (PH3) plasma have been investigated using isothermal capacitance transient spectroscopy (ICTS). One electron trap (E(c)-0.54 eV) is generated by Ar-plasma treatment at 250-degrees-C for 60 min. Annealing at 350-degrees-C for 3 min after Ar-plasma treatment induces another electron trap (E(c)-0.32 eV) together with an increase of the (E(c)-0.54 eV) trap density. In contrast to the case of Ar plasma, no traps are detected in InP treated with PH3 Plasma consisting of Ar(90%) and PH3(10%) at 250-degrees-C for 60 min. Moreover, addition of PH3 to hydrogen (H-2) PlasMa is shown to be effective in suppressing generation of the traps. Generation of these traps does not occur due to annealing after PH3-plasma treatment, while simple annealing of as-etched InP introduces these traps. It is demonstrated that PH3-plasma treatment leads to diffusion of phosphorus atoms during the process and deposition of a thin phosphorus layer at the surface of InP.

引用

页码：L12 / L15

页数：4

共 12 条

[1] HYDROGEN PASSIVATION OF ACCEPTORS IN P-INP [J].