TRANSIENT TEMPERATURE PROFILES WITHIN ACTIVE REGION OF UNIFORMLY DOPED AND HIGH-LOW DOPED SCHOTTKY IMPATTS

被引：9

作者：

AMOSS, JW

ELFE, TB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 09期

关键词：

D O I：

10.1109/T-ED.1978.19242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1160 / 1166

页数：7

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