TRANSPORT OF ELECTRONS IN QUANTIZED INVERSION AND ACCUMULATION LAYERS IN III-V COMPOUNDS

In physically small and/or high frequency metal-oxide-semiconductor devices the carriers are confined to regions sufficiently close to the interface for their motion to become quasi-two-dimensional in nature, even at room temperature. In this case the transport of carriers in the inversion or accumulation layers is much more susceptible to surface and/or interface properties. In this paper the transport of electrons (or holes) in quantized quasi-two-dimensional layers is discussed for III-V semiconductors, and the various scattering mechanisms are detailed. © 1979.